WeEn Semiconductors NXPSC10650B6J
MPNNXPSC10650B6J
Active
DIODE SIL CARBIDE 650V 10A D2PAK
$6.06Ref. price · indicative, final on quote
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Diode type | Silicon Carbide Schottky |
| Mounting | Surface Mount |
| Voltage - DC reverse (Vr) | 650 V |
| Voltage - forward (Vf) (Max) @ if | 1.7 V @ 10 A |
| Current - reverse leakage @ vr | 250 µA @ 650 V |
| Current - average rectified | 10A |
| Operating temperature - junction | 175°C (Max) |
| Speed | No Recovery Time > 500mA (Io) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Capacitance @ vr, | 300pF @ 1V, 1MHz |
| Reverse recovery time | 0 ns |