BYV32E-200,127
WeEn Semiconductors
BYV32E-200~6127
[IN STOCK] In Stock: 33 pcs
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Diode type | Standard |
| Mounting | Through Hole |
| Voltage - DC reverse (Vr) | 200 V |
| Voltage - forward (Vf) (Max) @ if | 1.15 V @ 20 A |
| Current - reverse leakage @ vr | 30 µA @ 200 V |
| Current - average rectified (Io) (per diode) | 20A |
| Operating temperature - junction | 150°C(Max) |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Package | Tube |
| Case | TO-220-3 |
| Diode configuration | 1 Pair Common Cathode |
| Reverse recovery time | 25 ns |
BYV32E-200,127
[ALLOC] verified