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WeEn Semiconductors BYV10MX-600PQ — Discrete Semiconductors

WeEn Semiconductors BYV10MX-600PQ

MPNBYV10MX-600PQ
Active

DIODE GEN PURP 600V 10A TO220F

$0.5800Ref. price · indicative, final on quote
PackagingTO-220-2 Full Pack, Isolated Tab
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

BYV10MX-600PQ Technical Specifications
ParameterValue
Mounting typeThrough Hole
Voltage - DC reverse (Vr)600 V
Voltage - forward (Vf) (Max) @ if2 V @ 10 A
Current - reverse leakage @ vr10 µA @ 600 V
Current - average rectified10A
Operating temperature - junction175°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTube
TechnologyStandard
CaseTO-220-2 Full Pack, Isolated Tab
Reverse recovery time35 ns