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Vishay VX80M100PW-M3/P — Discrete Semiconductors

VX80M100PW-M3/P Vishay 80A 100V Trench Schottky Rectifier

MPNVX80M100PW-M3/P
End of Life

Vishay VX80M100PW-M3/P Trench Schottky rectifier, 80 A, 100 V, dual common-cathode, TO-247-3 (TO-247AD), AEC-Q101, through-hole, tube.

$3.03Ref. price · indicative, final on quote
PackagingTO-247-3
SeriesAutomotive, AEC-Q101
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

VX80M100PW-M3/P specifications
ParameterValue
SeriesAutomotive, AEC-Q101
Diode typeSchottky
MountingThrough Hole
Voltage - DC reverse (Vr)100 V
Voltage - forward (Vf) (Max) @ if840 mV @ 40 A
Current - reverse leakage @ vr600 µA @ 100 V
Current - average rectified (Io) (per diode)40A
Operating temperature - junction-40°C ~ 175°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTube
CaseTO-247-3
Diode configuration1 Pair Common Cathode

Product details

Active production — what it means for a BOM line

The VX80M100PW-M3/P: For a design that already qualifies this dual common-cathode Schottky in a TO-247-3 footprint, the supply channel is the standard authorized-distribution route, not surplus or last-time-buy inventory. AEC-Q101 qualification means the rectifier has passed the full automotive stress battery: high-temperature reverse bias, temperature cycling, and ESD robustness per the JEDEC-based automotive discrete standard. The -40°C to 175°C junction range covers under-hood ambient and oil-immersed transmission environments.

Each Schottky die in the common-cathode pair is rated 40 A average rectified current (Io). At that current the forward drop is 840 mV max — so the per-diode conduction loss at full load is about 34 W. In a TO-247AD package with the tab soldered to a heatsink, the junction-to-case thermal path keeps the die below 175°C if the heatsink is sized for the sum of both diodes in the common-cathode configuration. Reverse leakage at the 100 V rated standoff is 600 µA max.

Fast recovery in a trench Schottky — switching edge

The VX80M100PW-M3/P is a Trench Schottky — the fast recovery classification (<500 ns, >200 mA Io) is inherent to the Schottky barrier, not a PiN diode. There is no stored charge to sweep out, so the reverse recovery time is dominated by the junction capacitance discharge. In a 100 V, 40 A boost or flyback stage the switching loss is negligible compared to the conduction loss, but the capacitive turn-on spike into the FET still needs a snubber if the layout inductance is high.