VS-C10ET07T-M3
Vishay
DIODE SIL CARB 650V 10A TO220AC
[IN STOCK] In Stock: 497 pcs
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Diode type | Silicon Carbide Schottky |
| Mounting | Through Hole |
| Voltage - DC reverse (Vr) | 650 V |
| Voltage - forward (Vf) (Max) @ if | 1.8 V @ 10 A |
| Current - reverse leakage @ vr | 55 µA @ 650 V |
| Current - average rectified | 10A |
| Operating temperature - junction | -55°C ~ 175°C |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Package | Tube |
| Case | TO-220-2 |
| Capacitance @ vr, | 430pF @ 1V, 1MHz |
VS-C10ET07T-M3
[ALLOC] verified