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Vishay V40PW22C-M3/I — Discrete Semiconductors

Vishay V40PW22C-M3/I Schottky, 20 A per diode, 200 V

MPNV40PW22C-M3/I
End of Life

Vishay V40PW22C-M3/I dual common-cathode Schottky rectifier, 20 A per diode, 200 V, 970 mV Vf, SlimDPAK, AEC-Q101, active production.

$1.29Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
SeriesAutomotive, AEC-Q101
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

V40PW22C-M3/I specifications
ParameterValue
SeriesAutomotive, AEC-Q101
Diode typeSchottky
MountingSurface Mount
Voltage - DC reverse (Vr)200 V
Voltage - forward (Vf) (Max) @ if970 mV @ 20 A
Current - reverse leakage @ vr250 µA @ 200 V
Current - average rectified (Io) (per diode)20A
Operating temperature - junction-40°C ~ 175°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTape & Reel (TR); Cut Tape (CT)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Diode configuration1 Pair Common Cathode

Product details

Active production — BOM-fit note

The V40PW22C-M3/I is an active Vishay dual common-cathode Schottky rectifier rated 20 A per diode at 200 V reverse, with a forward drop of 970 mV at full current. The AEC-Q101 qualification means it is screened for the -40 to 175 °C junction range and automotive reliability stress — suitable for under-hood DC-DC converters, alternator rectification, and reverse-battery protection where the thermal cycle profile matches the automotive discrete standard.

Forward drop and thermal budget

At 20 A per diode the 970 mV forward drop produces about 19.4 W of conduction loss per die. The SlimDPAK (TO-252 derivative) relies on the cathode tab soldered to the PCB copper area to sink that heat. The 175 °C junction rating gives headroom, but the real junction temperature depends on the board's thermal pad size and the ambient under the hood — a 1 oz copper pad with minimal thermal vias will push the die close to the limit at full load.

Reverse leakage at temperature

The 250 µA reverse leakage at 200 V is specified at 25 °C. Schottky leakage doubles roughly every 10 °C, so at 125 °C junction the leakage can exceed 10 mA — enough to add measurable standby loss in a system that idles hot. The trade-off against a fast-recovery silicon diode is lower forward drop at low current but higher leakage at elevated temperature.

Package and PCB layout

The TO-252-3 (DPak) footprint with the SlimDPAK variant has the cathode tab as the common terminal for both diodes. The two anode pads are separate — the layout must keep the high-current anode traces isolated and the tab connected to the output rail with a wide copper pour.