US1D-E3/5AT

Vishay

DIODE GEN PURP 200V 1A DO214AC

Vishay US1D-E3/5AT
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

US1D-E3/5AT specifications
Parameter / AttributeSpecification / Value
Diode typeStandard
MountingSurface Mount
Voltage - DC reverse (Vr)200 V
Voltage - forward (Vf) (Max) @ if1 V @ 1 A
Current - reverse leakage @ vr10 µA @ 200 V
Current - average rectified1A
Operating temperature - junction-55°C ~ 150°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTape & Reel (TR); Cut Tape (CT)
CaseDO-214AC, SMA
Capacitance @ vr,15pF @ 4V, 1MHz
Reverse recovery time50 ns
US1D-E3/5AT
[ALLOC] verified
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