US1B-E3/61T

Vishay

DIODE GEN PURP 100V 1A DO214AC

Vishay US1B-E3/61T
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

US1B-E3/61T specifications
Parameter / AttributeSpecification / Value
Diode typeStandard
MountingSurface Mount
Voltage - DC reverse (Vr)100 V
Voltage - forward (Vf) (Max) @ if1 V @ 1 A
Current - reverse leakage @ vr10 µA @ 100 V
Current - average rectified1A
Operating temperature - junction-55°C ~ 150°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTape & Reel (TR); Cut Tape (CT)
CaseDO-214AC, SMA
Capacitance @ vr,15pF @ 4V, 1MHz
Reverse recovery time50 ns
US1B-E3/61T
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