SUP60061EL-GE3
Vishay · TrenchFET® Series
P-CHANNEL 80 V (D-S) MOSFET TO-2
[IN STOCK] In Stock: 1 pcs
MOQ 1 · Bulk · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | TrenchFET® |
| FET type | P-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 80 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 150A (Tc) |
| Power dissipation | 375W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Bulk |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 2.5V @ 250µA |
| Rds on (Max) @ id, vgs | 5.8mOhm @ 20A, 10V |
| Gate charge (Qg) (Max) @ vgs | 218 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 9600 pF @ 40 V |
SUP60061EL-GE3
[ALLOC] verified