SQSA80ENW-T1_GE3

Vishay · Automotive, AEC-Q101, TrenchFET® Series

MOSFET N-CH 80V 18A PPAK1212-8

Vishay SQSA80ENW-T1_GE3
Download datasheet (PDF)
[IN STOCK] In Stock: 685 pcs
$1.40/ pc

Volume pricing

Buy Now

MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

SQSA80ENW-T1_GE3 specifications
Parameter / AttributeSpecification / Value
SeriesAutomotive, AEC-Q101, TrenchFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage80 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C18A (Tc)
Power dissipation62.5W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CasePowerPAK® 1212-8
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs21mOhm @ 10A, 10V
Gate charge (Qg) (Max) @ vgs21 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1358 pF @ 40 V
SQSA80ENW-T1_GE3
[ALLOC] verified
Quote