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Vishay SQS850EN-T1_BE3

Vishay SQS850EN-T1_BE3

MPNSQS850EN-T1_BE3
End of Life

N-CHANNEL 60-V (D-S) 175C MOSFET

$0.99Ref. price · indicative, final on quote
PackagingPowerPAK® 1212-8
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SQS850EN-T1_BE3 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C12A (Tc)
Power dissipation33W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CasePowerPAK® 1212-8
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs21.5mOhm @ 6.1A, 10V
Gate charge (Qg) (Max) @ vgs41 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2021 pF @ 30 V