SQJB68EP-T1_BE3

Vishay · TrenchFET® Series

MOSFET 2N-CH 100V 11A PPAK SO8

Vishay SQJB68EP-T1_BE3
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

SQJB68EP-T1_BE3 specifications
Parameter / AttributeSpecification / Value
SeriesTrenchFET®
MountingSurface Mount
Drain to source voltage100V
Current - continuous drain (Id) @ 25°C11A (Tc)
Power - max27W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
GradeAutomotive
PackageTape & Reel (TR); Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
QualificationAEC-Q101
CasePowerPAK® SO-8 Dual
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs92mOhm @ 4A, 10V
Gate charge (Qg) (Max) @ vgs8nC @ 10V
Input capacitance (Ciss) (Max) @ vds280pF @ 25V
SQJB68EP-T1_BE3
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