SQJB04ELP-T1_GE3

Vishay · TrenchFET® Series

MOSFET 2N-CH 40V 30A PPAK SO8

Vishay SQJB04ELP-T1_GE3
Download datasheet (PDF)
[IN STOCK] In Stock: 10 pcs
$1.32/ pc

Volume pricing

Buy Now

MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

SQJB04ELP-T1_GE3 specifications
Parameter / AttributeSpecification / Value
SeriesTrenchFET®
MountingSurface Mount
Drain to source voltage40V
Current - continuous drain (Id) @ 25°C30A (Tc)
Power - max27W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
GradeAutomotive
PackageTape & Reel (TR); Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
QualificationAEC-Q101
CasePowerPAK® SO-8 Dual
Vgs(th) (Max) @ id2.2V @ 250µA
Rds on (Max) @ id, vgs11mOhm @ 5A, 10V
Gate charge (Qg) (Max) @ vgs20nC @ 10V
Input capacitance (Ciss) (Max) @ vds1055pF @ 25V
SQJB04ELP-T1_GE3
[ALLOC] verified
Quote