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Vishay SQJ912BEP-T1_GE3

Vishay SQJ912BEP-T1_GE3

MPNSQJ912BEP-T1_GE3
End of Life

MOSFET 2N-CH 40V 30A PPAK SO8

$1.36Ref. price · indicative, final on quote
PackagingPowerPAK® SO-8 Dual
RoHSROHS3 Compliant
SeriesTrenchFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SQJ912BEP-T1_GE3 specifications
ParameterValue
SeriesTrenchFET®
MountingSurface Mount
Drain to source voltage40V
Current - continuous drain (Id) @ 25°C30A (Tc)
Power - max48W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
GradeAutomotive
PackageTape & Reel (TR); Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
QualificationAEC-Q101
CasePowerPAK® SO-8 Dual
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs11mOhm @ 9A, 10V
Gate charge (Qg) (Max) @ vgs60nC @ 10V
Input capacitance (Ciss) (Max) @ vds3000pF @ 25V