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Vishay SQJ479EP-T1_BE3

Vishay SQJ479EP-T1_BE3

MPNSQJ479EP-T1_BE3
End of Life

P-CHANNEL 80-V (D-S) 175C MOSFET

$1.18Ref. price · indicative, final on quote
PackagingPowerPAK® SO-8
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SQJ479EP-T1_BE3 specifications
ParameterValue
FET typeP-Channel
MountingSurface Mount
Drain to source voltage80 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C32A (Tc)
Power dissipation68W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CasePowerPAK® SO-8
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs33mOhm @ 10A, 10V
Gate charge (Qg) (Max) @ vgs150 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4500 pF @ 25 V