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Vishay SQJ456EP-T1_GE3

SQJ456EP-T1_GE3 - Vishay

MPNSQJ456EP-T1_GE3
End of Life

MOSFET N-CH 100V 32A PPAK SO-8

$5.3Ref. price · indicative, final on quote
PackagingPowerPAK® SO-8
RoHSROHS3 Compliant
SeriesAutomotive, AEC-Q101, TrenchFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SQJ456EP-T1_GE3 specifications
ParameterValue
SeriesAutomotive, AEC-Q101, TrenchFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C32A (Tc)
Power dissipation83W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CasePowerPAK® SO-8
Vgs(th) (Max) @ id3.5V @ 250µA
Rds on (Max) @ id, vgs26mOhm @ 9.3A, 10V
Gate charge (Qg) (Max) @ vgs63 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3342 pF @ 25 V