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Vishay SQJ431AEP-T1_BE3 — Discrete Semiconductors

SQJ431AEP-T1_BE3 P-Channel MOSFET, 200 V, 9.4 A, AEC-Q101

MPNSQJ431AEP-T1_BE3
End of Life

Vishay TrenchFET® P-Channel MOSFET, SQJ431AEP-T1_BE3, 200 V Vdss, 9.4 A continuous drain, 305 mOhm Rds(on) at 10 V, AEC-Q101 qualified, PowerPAK SO-8, -55 to 175 °C junction.

$1.57Ref. price · indicative, final on quote
PackagingPowerPAK® SO-8
SeriesTrenchFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

SQJ431AEP-T1_BE3 specifications
ParameterValue
SeriesTrenchFET®
FET typeP-Channel
MountingSurface Mount
Drain to source voltage200 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C9.4A (Tc)
Power dissipation68W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
GradeAutomotive
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
CasePowerPAK® SO-8
Vgs(th) (Max) @ id3.5V @ 250µA
Rds on (Max) @ id, vgs305mOhm @ 3.8A, 10V
Gate charge (Qg) (Max) @ vgs85 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3700 pF @ 25 V

Product details

200 V P-channel in a PowerPAK SO-8 — high-side switching for 48 V automotive buses

The P-channel polarity simplifies high-side drive circuits — no charge pump or bootstrap needed — which matters in 48 V mild-hybrid bus architectures or 72 V truck systems where the gate drive is referenced to the source.

At that operating point the conduction loss is about 4.4 W — well within the 68 W package power dissipation rating, but the thermal path through the PowerPAK SO-8 exposed pad needs a solid via stitch to the ground plane to keep the junction below 175 °C. The drive voltage range spans 6 V to 10 V for optimum Rds(on); at 6 V the on-resistance will be higher, so budget the gate drive rail accordingly if the system runs on a 5 V or 3.3 V logic supply.

That gate charge is moderate for a 200 V device — the driver sees about 8.5 µC per switching event at 100 kHz, which a standard automotive gate driver IC can handle without excessive dissipation.

Frequently asked questions

Is SQJ431AEP-T1_BE3 AEC-Q101 qualified?

Yes, the SQJ431AEP-T1_BE3 carries AEC-Q101 qualification, making it suitable for automotive-grade applications where the stress tests for humidity, temperature cycling, and high-temperature reverse bias are required.

What is the Rds(on) of SQJ431AEP-T1_BE3 at 10 V?

The maximum on-resistance is 305 mOhm at a 10 V gate drive with 3.8 A drain current. This is the figure to use for worst-case conduction loss calculations in the power budget.

What is the difference between SQJ431AEP and SQJ431AEP-T1_BE3?

The SQJ431AEP-T1_BE3 suffix indicates the Tape & Reel packaging variant for automated assembly. The die and electrical specifications are identical to the SQJ431AEP base part.