SQJ420EP-T1_GE3

Vishay · TrenchFET® Series

MOSFET N-CH 40V 30A PPAK SO-8

Vishay SQJ420EP-T1_GE3
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

SQJ420EP-T1_GE3 specifications
Parameter / AttributeSpecification / Value
SeriesTrenchFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C30A (Tc)
Power dissipation45W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
GradeAutomotive
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
CasePowerPAK® SO-8
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs10mOhm @ 9.7A, 10V
Gate charge (Qg) (Max) @ vgs41 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1860 pF @ 25 V
SQJ420EP-T1_GE3
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