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Vishay SQJ412EP-T1_GE3

Vishay SQJ412EP-T1_GE3

MPNSQJ412EP-T1_GE3
End of Life

MOSFET N-CH 40V 32A PPAK SO-8

$2.48Ref. price · indicative, final on quote
PackagingPowerPAK® SO-8
RoHSROHS3 Compliant
SeriesAutomotive, AEC-Q101, TrenchFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SQJ412EP-T1_GE3 specifications
ParameterValue
SeriesAutomotive, AEC-Q101, TrenchFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C32A (Tc)
Power dissipation83W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CasePowerPAK® SO-8
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs4.1mOhm @ 10.3A, 10V
Gate charge (Qg) (Max) @ vgs120 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds5950 pF @ 20 V