SQD19P06-60L_T4GE3

Vishay · Automotive, AEC-Q101, TrenchFET® Series

MOSFET P-CH 60V 20A TO252AA

Vishay SQD19P06-60L_T4GE3
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[IN STOCK] In Stock: 6 pcs
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

SQD19P06-60L_T4GE3 specifications
Parameter / AttributeSpecification / Value
SeriesAutomotive, AEC-Q101, TrenchFET®
FET typeP-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C20A (Tc)
Power dissipation46W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs55mOhm @ 19A, 10V
Gate charge (Qg) (Max) @ vgs41 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1490 pF @ 25 V
SQD19P06-60L_T4GE3
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