Vishay Automotive, AEC-Q101, TrenchFET® N-Channel MOSFET, 300 V Vdss, 10 A Id, 330 mOhm Rds(on), TO-252-3 (DPak), SQD10N30-330H_4GE3.
| Parameter | Value |
|---|---|
| Series | Automotive, AEC-Q101, TrenchFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 300 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 10A (Tc) |
| Power dissipation | 107W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 4.4V @ 250µA |
| Rds on (Max) @ id, vgs | 330mOhm @ 14A, 10V |
| Gate charge (Qg) (Max) @ vgs | 47 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2190 pF @ 25 V |
The SQD10N30-330H_4GE3: Total gate charge Qg is 47 nC at Vgs = 10 V, with input capacitance Ciss of 2190 pF at Vds = 25 V — these set the switching energy and gate-driver current needed for the target frequency.
Maximum power dissipation is 107 W at case temperature Tc, derated as junction temperature rises — the SOA at 175 °C limits continuous current well below the 25 °C figure.
The SQJ402EP-T1_GE3 is a 100 V N-channel TrenchFET in a similar TO-252 package, but its 100 V Vdss is well below the 300 V rating of the SQD10N30-330H_4GE3 — they are not drop-in replacements for the same voltage rail.