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Vishay SQA600CEJW-T1_GE3 — Discrete Semiconductors

Vishay SQA600CEJW-T1_GE3 N-Channel MOSFET, 80 V, 9 A

MPNSQA600CEJW-T1_GE3
End of Life

Vishay Automotive, AEC-Q101, TrenchFET® N-Channel MOSFET, 80 V, 9 A, 54.6 mOhm, PowerPAK SC-70W-6, Tape & Reel.

$0.6Ref. price · indicative, final on quote
Vishay SQA600CEJW-T1_GE3 datasheet (PDF)
Packaging6-PowerVDFN
RoHSROHS3 Compliant
SeriesAutomotive, AEC-Q101, TrenchFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

SQA600CEJW-T1_GE3 specifications
ParameterValue
SeriesAutomotive, AEC-Q101, TrenchFET®
FET typeN-Channel
MountingSurface Mount, Wettable Flank
Drain to source voltage80 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C9A (Tc)
Power dissipation13.6W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case6-PowerVDFN
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs54.6mOhm @ 3A, 10V
Gate charge (Qg) (Max) @ vgs9 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds540 pF @ 25 V

Product details

Automotive-grade parametrics and switching behaviour

The SQA600CEJW-T1_GE3: Qualified to AEC-Q101, the part operates over a -55°C to 175°C junction temperature range — the 175°C ceiling covers under-hood and transmission-bay ambient where the die sees sustained high temperature. Gate charge is 9 nC at 10 V, and input capacitance measures 540 pF at 25 V drain bias — the low Qg and Ciss keep the gate-drive current modest at switching frequencies up to several hundred kilohertz, so a small driver or a series resistor from a microcontroller GPIO can handle the transition.

Package, mounting, and compliance

Supplied in the PowerPAK SC-70W-6 package with wettable flank terminals — the wettable flank enables automated optical inspection (AOI) of the solder joint on the side of the package, a requirement for automotive manufacturing lines.