Vishay SQA446CEJW-T1_GE3 — Discrete Semiconductors
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Vishay SQA446CEJW-T1_GE3 N-Channel MOSFET, 20 V, 9 A

MPN SQA446CEJW-T1_GE3
End of Life Spot Stock · 24-48h Dispatch 100% Original Sealed

Vishay Automotive, AEC-Q101, TrenchFET® N-Channel MOSFET, 20 V Vdss, 9 A Id, 17.5 mOhm Rds(on), PowerPAK SC-70W-6, SQA446CEJW-T1_GE3.

In Stock: 2,956 pcs
MOQ: 1 pcs
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Dispatch: Shenzhen / HK
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[SPEC] Essential Parameters Snapshot Full Specifications (16)
Package / Case 6-PowerVDFN
Output / Current 20 V

Full Technical Specifications

16 Parameters
SQA446CEJW-T1_GE3 specifications
Parameter / AttributeSpecification / Value
SeriesAutomotive, AEC-Q101, TrenchFET®
FET typeN-Channel
MountingSurface Mount, Wettable Flank
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)2.5V, 4.5V
Current - continuous drain (Id) @ 25°C9A (Tc)
Power dissipation13.6W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±12V
TechnologyMOSFET (Metal Oxide)
Case6-PowerVDFN
Vgs(th) (Max) @ id1.3V @ 250µA
Rds on (Max) @ id, vgs17.5mOhm @ 4.5A, 4.5V
Gate charge (Qg) (Max) @ vgs10 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds910 pF @ 10 V
Series Sibling Variants

Vishay Automotive, AEC-Q101, TrenchFET® Series Models

Sibling variants, package options, and speed/density grades in this Vishay semiconductor series. Active Shenzhen warehouse allocation and rapid 24-48h dispatch.

Technical Details & Description

20 V N-channel TrenchFET — the switching-loss sweet spot

The SQA446CEJW-T1_GE3: It targets low-voltage power switching where Rds(on) and gate charge both matter — the 17.5 mOhm max on-resistance at 4.5 V gate drive keeps conduction loss under 1.6 W at full current, while the 10 nC typical gate charge at 4.5 V means the driver doesn't waste a switching cycle charging the gate. The AEC-Q101 qualification covers the -55 °C to 175 °C junction temperature range — this is the under-hood automotive band. An engine-bay ECU or transmission controller that sees 125 °C ambient still has 50 °C of margin before derating kicks in.

Rds(on), gate charge, and the drive voltage window

Rds(on) is specified at two drive voltages: 17.5 mOhm max at 4.5 Vgs, 4.5 A Id. The drive voltage window of 2.5 V (minimum for rated Rds(on)) to 4.5 V (maximum) means a 3.3 V logic-level gate drive will barely turn it on — the 2.5 V threshold is 1.3 V max at 250 µA, so a 3.3 V rail gives about 2 V of overdrive, enough to hit the 4.5 V Rds(on) curve only if the driver can source the 10 nC gate charge fast enough. Input capacitance is 910 pF typical at 10 V Vds — that's the load the gate driver sees during switching. Combined with the 10 nC gate charge, the switching energy per cycle is low enough that 500 kHz+ operation is feasible without a heatsink, provided the PCB copper area under the PowerPAK SC-70W-6 dissipates the 13.6 W max power.

PowerPAK SC-70W-6 — wettable flank for AOI

The 6-PowerVDFN package with wettable flank terminals means the side of each lead is plated for solder wetting — automated optical inspection (AOI) can verify the solder fillet on the side of the package, not just the bottom. This is a requirement for many automotive Tier-1s: without wettable flank, a bottom-only solder joint is invisible to AOI and the assembly is classed as a latent defect risk. A 2-layer board with a 1 oz copper pour under the pad drops the junction-to-ambient thermal resistance to about 40 °C/W; a 4-layer board with thermal vias cuts it to 25 °C/W.

Frequently asked questions

What's the difference between SQA446CEJW-T1_GE3 and SQA602CEJW-T1_GE3?

The SQA602CEJW-T1_GE3 is a 80 V device with a higher Rds(on) of 94 mOhm at 10 Vgs, while the SQA446CEJW is a 20 V part with 17.5 mOhm at 4.5 Vgs. Both share the same PowerPAK SC-70W-6 package and AEC-Q101 qualification, but the gate drive voltage differs — the 602 needs 10 V for rated Rds(on), the 446 works at 4.5 V. They are not pin-compatible substitutes without a board spin.

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