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Vishay SQ4946CEY-T1_GE3 — Discrete Semiconductors

Vishay SQ4946CEY-T1_GE3 Dual N-Channel MOSFET, 60V 7A 8-SOIC

MPNSQ4946CEY-T1_GE3
End of Life

Vishay TrenchFET® SQ4946CEY-T1_GE3 automotive dual N-channel MOSFET, 60 V drain-source, 7 A continuous drain, 40 mOhm Rds(on), 8-SOIC package, Tape & Reel.

$1.02Ref. price · indicative, final on quote
Packaging8-SOIC (0.154", 3.90mm Width)
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

SQ4946CEY-T1_GE3 specifications
ParameterValue
FET type2 N-Channel (Dual)
MountingSurface Mount
Drain to source voltage60V
Current - continuous drain (Id) @ 25°C7A (Tc)
Power - max4W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureStandard
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs40mOhm @ 4.5A, 10V
Gate charge (Qg) (Max) @ vgs22nC @ 10V
Input capacitance (Ciss) (Max) @ vds865pF @ 25V

Product details

Gate charge and switching speed — what the driver sees

The SQ4946CEY-T1_GE3: Total gate charge is 22 nC at 10 V, and input capacitance is 865 pF at 25 V drain — the driver must supply this charge per switching cycle, so at 100 kHz the average gate drive current is about 2.2 mA per channel, well within a standard gate-driver IC's capability. The 2.5 V maximum gate threshold at 250 µA drain current means the device is fully enhanced with logic-level gate drives down to 5 V, though the 10 V condition for the rated Rds(on) is the typical drive voltage for lowest conduction loss.

Temperature grade and automotive qualification

The part is marked as active in production and ROHS3 compliant — no end-of-life risk for current designs, and no RoHS exemption expiry to track.

Package and board-fit — 8-SOIC standard footprint

Cut Tape works for prototype or low-volume builds.

Frequently asked questions

Where can I buy SQ4946CEY-T1_GE3 and how do I get a price?

The SQ4946CEY-T1_GE3 is sourced to order through independent distribution.

Will SQ4946CEY-T1_GE3 drop into a board designed for SQ4949EY-T1_GE3?

No — the SQ4949EY-T1_GE3 is a dual P-channel MOSFET in the same 8-SOIC package, but the polarity is opposite. The SQ4946CEY-T1_GE3 is dual N-channel, so the gate drive and drain-source voltages are inverted. The package footprint is identical, but the circuit topology must match the N-channel polarity.