The SQ4080EY-T1_BE3: That 150 V Vdss puts it solidly in the 48 V telecom bus, 72 V battery string, and 100 V intermediate-bus territory — plenty of headroom above a 48 V rail that can ring past 70 V during a hot-swap event. Maximum on-resistance is 85 mOhm at 10 A gate drive of 10 V, which is the stated drive voltage for achieving the rated Rds(on). At 18 A the conduction loss is I²R = 27.5 W — well above the 7.1 W package limit at Tc, so in practice the continuous current is thermally limited to about 9 A in free air on a standard 1 oz copper pad. The 85 mOhm figure is the one to use for loss budgeting at the nominal operating point, not the 18 A headline.
Gate drive and switching — the numbers behind the 33 nC Qg
Gate charge is 33 nC at Vgs = 10 V, and input capacitance (Ciss) is 1590 pF at Vds = 75 V. The gate-driver must source at least 33 nC per switching cycle; for a 100 kHz switching frequency that translates to 3.3 mA average gate current, well within a standard driver's capability. The 1590 pF Ciss means the gate rise time at a 10-ohm drive impedance is about 16 ns — fast enough for most hard-switching topologies, but the Miller plateau charge (Qgd, not listed here) is the real limiter for switching loss, so budget margin in the dead-time setting.
Active production — sourcing posture for this Vishay part
Lifecycle status is Active per the manufacturer (Vishay).