SQ3469EV-T1_BE3

Vishay

P-CHANNEL 20-V (D-S) 175C MOSFET

Vishay SQ3469EV-T1_BE3
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[IN STOCK] In Stock: 1,424 pcs
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

SQ3469EV-T1_BE3 specifications
Parameter / AttributeSpecification / Value
FET typeP-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C8A (Tc)
Power dissipation5W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseSOT-23-6 Thin, TSOT-23-6
Vgs(th) (Max) @ id2.5V @ 25µA
Rds on (Max) @ id, vgs36mOhm @ 6.7A, 10V
Gate charge (Qg) (Max) @ vgs27 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1020 pF @ 10 V
SQ3469EV-T1_BE3
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