SQ1912AEEH-T1_GE3

Vishay · Automotive, AEC-Q101, TrenchFET® Series

MOSFET 2N-CH 20V POWERPAK SC70-6

Vishay SQ1912AEEH-T1_GE3
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

SQ1912AEEH-T1_GE3 specifications
Parameter / AttributeSpecification / Value
SeriesAutomotive, AEC-Q101, TrenchFET®
FET type2 N-Channel (Dual)
MountingSurface Mount
Drain to source voltage20V
Current - continuous drain (Id) @ 25°C800mA (Tc)
Power - max1.5W
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureStandard
Case6-TSSOP, SC-88, SOT-363
Vgs(th) (Max) @ id1.5V @ 250µA
Rds on (Max) @ id, vgs280mOhm @ 1.2A, 4.5V
Gate charge (Qg) (Max) @ vgs1.25nC @ 4.5V
Input capacitance (Ciss) (Max) @ vds27pF @ 10V
SQ1912AEEH-T1_GE3
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