SQ1563AEH-T1_GE3

Vishay · TrenchFET® Series

MOSFET N/P-CH 20V POWERPAKSC70-6

Vishay SQ1563AEH-T1_GE3
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

SQ1563AEH-T1_GE3 specifications
Parameter / AttributeSpecification / Value
SeriesTrenchFET®
FET typeN and P-Channel
MountingSurface Mount
Drain to source voltage20V
Current - continuous drain (Id) @ 25°C850mA (Tc)
Power - max1.5W
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureStandard
CasePowerPAK® SC-70-6 Dual
Vgs(th) (Max) @ id1.5V @ 250µA
Rds on (Max) @ id, vgs280mOhm @ 850mA, 4.5V, 575mOhm @ 800mA, 4.5V
Gate charge (Qg) (Max) @ vgs1.25nC @ 4.5V, 1.33nC @ 4.5V
Input capacitance (Ciss) (Max) @ vds89pF @ 10V, 84pF @ 10V
SQ1563AEH-T1_GE3
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