Vishay SIZF916DT-T1-GE3
MPNSIZF916DT-T1-GE3
End of Life
MOSFET N-CH DUAL 30V
$1.67Ref. price · indicative, final on quote
Packaging8-PowerWDFN
RoHSROHS3 Compliant
SeriesTrenchFET® Gen IV
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | TrenchFET® Gen IV |
| FET type | 2 N-Channel (Dual) |
| Mounting | Surface Mount |
| Drain to source voltage | 30V |
| Current - continuous drain (Id) @ 25°C | 23A (Ta), 40A (Tc) |
| Power - max | 3.4W (Ta), 26.6W (Tc), 4W (Ta), 60W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| FET feature | Standard |
| Case | 8-PowerWDFN |
| Vgs(th) (Max) @ id | 2.4V @ 250µA, 2.2V @ 250µA |
| Rds on (Max) @ id, vgs | 4mOhm @ 10A, 10V, 1.25mOhm @ 10A, 10V |
| Gate charge (Qg) (Max) @ vgs | 22nC @ 10V, 95nC @ 10V |
| Input capacitance (Ciss) (Max) @ vds | 1060pF @ 15V, 4320pF @ 15V |