SIZF5300DT-T1-GE3

Vishay · TrenchFET® Gen V Series

MOSFET 2N-CH 30V 35A PWRPAIR

Vishay SIZF5300DT-T1-GE3
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

SIZF5300DT-T1-GE3 specifications
Parameter / AttributeSpecification / Value
SeriesTrenchFET® Gen V
FET type2 N-Channel (Dual) Common Source
MountingSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C35A (Ta), 125A (Tc)
Power - max4.5W (Ta), 56.8W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureStandard
Case12-PowerPair™
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs2.43mOhm @ 10A, 10V
Gate charge (Qg) (Max) @ vgs32nC @ 10V
Input capacitance (Ciss) (Max) @ vds1480pF @ 15V
SIZF5300DT-T1-GE3
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