SIZ988DT-T1-GE3

Vishay · TrenchFET® Series

MOSFET 2 N-CH 30V 8-POWERPAIR

Vishay SIZ988DT-T1-GE3
Download datasheet (PDF)
[IN STOCK] In Stock: 35 pcs
$1.98/ pc

Volume pricing

Buy Now

MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

SIZ988DT-T1-GE3 specifications
Parameter / AttributeSpecification / Value
SeriesTrenchFET®
FET type2 N-Channel (Dual)
MountingSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C40A (Tc), 60A (Tc)
Power - max20.2W, 40W
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureStandard
Case8-PowerWDFN
Vgs(th) (Max) @ id2.4V @ 250µA, 2.2V @ 250µA
Rds on (Max) @ id, vgs7.5mOhm @ 10A, 10V, 4.1mOhm @ 19A, 10V
Gate charge (Qg) (Max) @ vgs10.5nC @ 4.5V, 23.1nC @ 4.5V
Input capacitance (Ciss) (Max) @ vds1000pF @ 15V, 2425pF @ 15V
SIZ988DT-T1-GE3
[ALLOC] verified
Quote