SIZ980BDT-T1-GE3
Vishay · TrenchFET® Gen IV Series
MOSFET DUAL N-CH 30V PPAIR 6 X 5
SIZ980BDT-T1-GE3
[IN STOCK] In Stock: 100 pcs
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | TrenchFET® Gen IV |
| FET type | 2 N-Channel (Dual), Schottky |
| Mounting | Surface Mount |
| Drain to source voltage | 30V |
| Current - continuous drain (Id) @ 25°C | 23.7A (Ta), 54.8A (Tc), 54.3A (Ta), 197A (Tc) |
| Power - max | 3.8W (Ta), 20W (Tc), 5W (Ta), 66W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| FET feature | Standard |
| Case | 8-PowerWDFN |
| Vgs(th) (Max) @ id | 2.2V @ 250µA |
| Rds on (Max) @ id, vgs | 4.39mOhm @ 15A, 10V, 1.06mOhm @ 19A, 10V |
| Gate charge (Qg) (Max) @ vgs | 18nC @ 10V, 79nC @ 10V |
| Input capacitance (Ciss) (Max) @ vds | 790pF @ 15V, 3655pF @ 15V |
SIZ980BDT-T1-GE3
[ALLOC] verified