SIZ980BDT-T1-GE3
Vishay SIZ980BDT-T1-GE3
MPNSIZ980BDT-T1-GE3
End of Life
MOSFET DUAL N-CH 30V PPAIR 6 X 5
$1.69Ref. price · indicative, final on quote
Packaging8-PowerWDFN
RoHSROHS3 Compliant
SeriesTrenchFET® Gen IV
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | TrenchFET® Gen IV |
| FET type | 2 N-Channel (Dual), Schottky |
| Mounting | Surface Mount |
| Drain to source voltage | 30V |
| Current - continuous drain (Id) @ 25°C | 23.7A (Ta), 54.8A (Tc), 54.3A (Ta), 197A (Tc) |
| Power - max | 3.8W (Ta), 20W (Tc), 5W (Ta), 66W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| FET feature | Standard |
| Case | 8-PowerWDFN |
| Vgs(th) (Max) @ id | 2.2V @ 250µA |
| Rds on (Max) @ id, vgs | 4.39mOhm @ 15A, 10V, 1.06mOhm @ 19A, 10V |
| Gate charge (Qg) (Max) @ vgs | 18nC @ 10V, 79nC @ 10V |
| Input capacitance (Ciss) (Max) @ vds | 790pF @ 15V, 3655pF @ 15V |