SIZ350DT-T1-GE3

Vishay · TrenchFET® Gen IV Series

MOSFET DUAL N-CHAN 30V POWERPAIR

SIZ350DT-T1-GE3
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[IN STOCK] In Stock: 32 pcs
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

SIZ350DT-T1-GE3 specifications
Parameter / AttributeSpecification / Value
SeriesTrenchFET® Gen IV
FET type2 N-Channel (Dual)
MountingSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C18.5A (Ta), 30A (Tc)
Power - max3.7W (Ta), 16.7W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureStandard
Case8-PowerWDFN
Vgs(th) (Max) @ id2.4V @ 250µA
Rds on (Max) @ id, vgs6.75mOhm @ 15A, 10V
Gate charge (Qg) (Max) @ vgs20.3nC @ 10V
Input capacitance (Ciss) (Max) @ vds940pF @ 15V
SIZ350DT-T1-GE3
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