SIZ340BDT-T1-GE3

Vishay

DUAL N-CHANNEL 30-V (D-S) MOSFET

SIZ340BDT-T1-GE3
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

SIZ340BDT-T1-GE3 specifications
Parameter / AttributeSpecification / Value
FET type2 N-Channel (Dual)
MountingSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C16.9A (Ta), 36A (Tc), 25.3A (Ta), 69.3A (Tc)
Power - max3.7W (Ta), 16.7W (Tc), 4.2W (Ta), 31W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureStandard
Case8-PowerWDFN
Vgs(th) (Max) @ id2.4V @ 250µA
Rds on (Max) @ id, vgs8.56mOhm @ 10A, 10V, 4.31mOhm @ 20A, 10V
Gate charge (Qg) (Max) @ vgs12.6nC @ 10V, 23.5nC @ 10V
Input capacitance (Ciss) (Max) @ vds550pF @ 15V, 1065pF @ 15V
SIZ340BDT-T1-GE3
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