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Vishay SIUD412ED-T1-GE3

Vishay SIUD412ED-T1-GE3

MPNSIUD412ED-T1-GE3
End of Life

MOSFET N-CH 12V 500MA PPAK 0806

$0.52Ref. price · indicative, final on quote
PackagingPowerPAK® 0806
RoHSROHS3 Compliant
SeriesTrenchFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SIUD412ED-T1-GE3 specifications
ParameterValue
SeriesTrenchFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage12 V
Drive voltage (Max rds on, min rds on)1.2V, 4.5V
Current - continuous drain (Id) @ 25°C500mA (Tc)
Power dissipation1.25W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±5V
TechnologyMOSFET (Metal Oxide)
CasePowerPAK® 0806
Vgs(th) (Max) @ id900mV @ 250µA
Rds on (Max) @ id, vgs340mOhm @ 500mA, 4.5V
Gate charge (Qg) (Max) @ vgs0.71 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds21 pF @ 6 V