SISS92DN-T1-GE3
Vishay · TrenchFET® Series
MOSFET N-CH 250V 3.4A/12.3A PPAK
[IN STOCK] In Stock: 15 pcs
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | TrenchFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 250 V |
| Drive voltage (Max rds on, min rds on) | 7.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 3.4A (Ta), 12.3A (Tc) |
| Power dissipation | 5.1W (Ta), 65.8W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | PowerPAK® 1212-8S |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 173mOhm @ 3.6A, 10V |
| Gate charge (Qg) (Max) @ vgs | 16 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 350 pF @ 125 V |
SISS92DN-T1-GE3
[ALLOC] verified