Vishay SISS63DN-T1-GE3
MPNSISS63DN-T1-GE3
End of Life
MOSFET P-CH 20V 35.1/127.5A PPAK
$1.02Ref. price · indicative, final on quote
PackagingPowerPAK® 1212-8S
RoHSROHS3 Compliant
SeriesTrenchFET® Gen III
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | TrenchFET® Gen III |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 20 V |
| Drive voltage (Max rds on, min rds on) | 2.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 35.1A (Ta), 127.5A (Tc) |
| Power dissipation | 5W (Ta), 65.8W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±12V |
| Technology | MOSFET (Metal Oxide) |
| Case | PowerPAK® 1212-8S |
| Vgs(th) (Max) @ id | 1.5V @ 250µA |
| Rds on (Max) @ id, vgs | 2.7mOhm @ 15A, 10V |
| Gate charge (Qg) (Max) @ vgs | 236 nC @ 8 V |
| Input capacitance (Ciss) (Max) @ vds | 7080 pF @ 10 V |