Vishay SISH892BDN-T1-GE3
MPNSISH892BDN-T1-GE3
End of Life
N-CHANNEL 100 V (D-S) MOSFET POW
$0.9Ref. price · indicative, final on quote
PackagingPowerPAK® SO-8
RoHSROHS3 Compliant
SeriesTrenchFET® Gen IV
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | TrenchFET® Gen IV |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 6.8A (Ta), 20A (Tc) |
| Power dissipation | 3.4W (Ta), 29W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | PowerPAK® SO-8 |
| Vgs(th) (Max) @ id | 2.4V @ 250µA |
| Rds on (Max) @ id, vgs | 30.4mOhm @ 10A, 10V |
| Gate charge (Qg) (Max) @ vgs | 26.5 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1110 pF @ 50 V |