SISF04DN-T1-GE3

Vishay · TrenchFET® Gen IV Series

MOSFET DUAL N-CH 30V PPAK 1212-8

Vishay SISF04DN-T1-GE3
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

SISF04DN-T1-GE3 specifications
Parameter / AttributeSpecification / Value
SeriesTrenchFET® Gen IV
FET type2 N-Channel (Dual) Common Drain
MountingSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C30A (Ta), 108A (Tc)
Power - max5.2W (Ta), 69.4W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureStandard
CasePowerPAK® 1212-8SCD
Vgs(th) (Max) @ id2.3V @ 250µA
Rds on (Max) @ id, vgs4mOhm @ 7A, 10V
Gate charge (Qg) (Max) @ vgs60nC @ 10V
Input capacitance (Ciss) (Max) @ vds2600pF @ 15V
SISF04DN-T1-GE3
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