SISF00DN-T1-GE3

Vishay · TrenchFET® Gen IV Series

MOSFET DUAL N-CH 30V POWERPAK 12

Vishay SISF00DN-T1-GE3
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

SISF00DN-T1-GE3 specifications
Parameter / AttributeSpecification / Value
SeriesTrenchFET® Gen IV
FET type2 N-Channel (Dual) Common Drain
MountingSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C60A (Tc)
Power - max69.4W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureStandard
CasePowerPAK® 1212-8SCD Dual
Vgs(th) (Max) @ id2.1V @ 250µA
Rds on (Max) @ id, vgs5mOhm @ 10A, 10V
Gate charge (Qg) (Max) @ vgs53nC @ 10V
Input capacitance (Ciss) (Max) @ vds2700pF @ 15V
SISF00DN-T1-GE3
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