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Vishay SISA40DN-T1-GE3

Vishay SISA40DN-T1-GE3

MPNSISA40DN-T1-GE3
End of Life

MOSFET N-CH 20V 43.7A/162A PPAK

$0.81Ref. price · indicative, final on quote
PackagingPowerPAK® 1212-8
RoHSROHS3 Compliant
SeriesTrenchFET® Gen IV
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SISA40DN-T1-GE3 specifications
ParameterValue
SeriesTrenchFET® Gen IV
FET typeN-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)2.5V, 10V
Current - continuous drain (Id) @ 25°C43.7A (Ta), 162A (Tc)
Power dissipation3.7W (Ta), 52W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs+12V, -8V
TechnologyMOSFET (Metal Oxide)
CasePowerPAK® 1212-8
Vgs(th) (Max) @ id1.5V @ 250µA
Rds on (Max) @ id, vgs1.1mOhm @ 10A, 10V
Gate charge (Qg) (Max) @ vgs53 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3415 pF @ 10 V