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Vishay SISA26DN-T1-GE3

Vishay SISA26DN-T1-GE3

MPNSISA26DN-T1-GE3
End of Life

MOSFET N-CH 25V 60A PPAK1212-8S

$0.85Ref. price · indicative, final on quote
PackagingPowerPAK® 1212-8
RoHSROHS3 Compliant
SeriesTrenchFET® Gen IV
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SISA26DN-T1-GE3 specifications
ParameterValue
SeriesTrenchFET® Gen IV
FET typeN-Channel
MountingSurface Mount
Drain to source voltage25 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C60A (Tc)
Power dissipation39W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs+16V, -12V
TechnologyMOSFET (Metal Oxide)
CasePowerPAK® 1212-8
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs2.65mOhm @ 15A, 10V
Gate charge (Qg) (Max) @ vgs44 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2247 pF @ 10 V