Vishay SISA18BDN-T1-GE3
MPNSISA18BDN-T1-GE3
End of Life
N-CHANNEL 30 V (D-S) MOSFET POWE
$0.71Ref. price · indicative, final on quote
Packaging8-PowerWDFN
RoHSROHS3 Compliant
SeriesTrenchFET® Gen IV
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | TrenchFET® Gen IV |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 18A (Ta), 60A (Tc) |
| Power dissipation | 3.2W (Ta), 36.8W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | +20V, -16V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerWDFN |
| Vgs(th) (Max) @ id | 2.4V @ 250µA |
| Rds on (Max) @ id, vgs | 6.83mOhm @ 10A, 10V |
| Gate charge (Qg) (Max) @ vgs | 19 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 680 pF @ 15 V |