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Vishay SIS990DN-T1-GE3

Vishay SIS990DN-T1-GE3

MPNSIS990DN-T1-GE3
End of Life

MOSFET 2N-CH 100V 12.1A 1212-8

$0.94Ref. price · indicative, final on quote
PackagingPowerPAK® 1212-8 Dual
RoHSROHS3 Compliant
SeriesTrenchFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SIS990DN-T1-GE3 specifications
ParameterValue
SeriesTrenchFET®
FET type2 N-Channel (Dual)
MountingSurface Mount
Drain to source voltage100V
Current - continuous drain (Id) @ 25°C12.1A
Power - max25W
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureStandard
CasePowerPAK® 1212-8 Dual
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs85mOhm @ 8A, 10V
Gate charge (Qg) (Max) @ vgs8nC @ 10V
Input capacitance (Ciss) (Max) @ vds250pF @ 50V