SIS176LDN-T1-GE3
Vishay · TrenchFET® Gen IV Series
N-CHANNEL 70 V (D-S) MOSFET POWE
[IN STOCK] In Stock: 1 pcs
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | TrenchFET® Gen IV |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 70 V |
| Drive voltage (Max rds on, min rds on) | 3.3V, 4.5V |
| Current - continuous drain (Id) @ 25°C | 12.9A (Ta), 42.3A (Tc) |
| Power dissipation | 3.6W (Ta), 39W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±12V |
| Technology | MOSFET (Metal Oxide) |
| Case | PowerPAK® 1212-8 |
| Vgs(th) (Max) @ id | 1.6V @ 250µA |
| Rds on (Max) @ id, vgs | 10.9mOhm @ 10A, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 19 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 1660 pF @ 35 V |
SIS176LDN-T1-GE3
[ALLOC] verified