SIR696DP-T1-GE3

Vishay · ThunderFET® Series

MOSFET N-CH 125V 60A PPAK SO-8

Vishay SIR696DP-T1-GE3
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[IN STOCK] In Stock: 13 pcs
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

SIR696DP-T1-GE3 specifications
Parameter / AttributeSpecification / Value
SeriesThunderFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage125 V
Drive voltage (Max rds on, min rds on)7.5V, 10V
Current - continuous drain (Id) @ 25°C60A (Tc)
Power dissipation104W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CasePowerPAK® SO-8
Vgs(th) (Max) @ id4.5V @ 250µA
Rds on (Max) @ id, vgs11.5mOhm @ 20A, 10V
Gate charge (Qg) (Max) @ vgs38 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1410 pF @ 75 V
SIR696DP-T1-GE3
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