SIR638ADP-T1-RE3
Vishay · TrenchFET® Gen IV Series
MOSFET N-CH 40V 100A PPAK SO-8
[IN STOCK] In Stock: 5,778 pcs
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | TrenchFET® Gen IV |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 40 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 100A (Tc) |
| Power dissipation | 104W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | +20V, -16V |
| Technology | MOSFET (Metal Oxide) |
| Case | PowerPAK® SO-8 |
| Vgs(th) (Max) @ id | 2.3V @ 250µA |
| Rds on (Max) @ id, vgs | 0.88mOhm @ 20A, 10V |
| Gate charge (Qg) (Max) @ vgs | 165 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 9100 pF @ 100 V |
SIR638ADP-T1-RE3
[ALLOC] verified