SIR606BDP-T1-RE3
Vishay · TrenchFET® Gen IV Series
MOSFET N-CH 100V 10.9A PPAK
[IN STOCK] In Stock: 25 pcs
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | TrenchFET® Gen IV |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 7.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 10.9A (Ta), 38.7A (Tc) |
| Power dissipation | 5W (Ta), 62.5W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | PowerPAK® SO-8 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 17.4mOhm @ 10A, 10V |
| Gate charge (Qg) (Max) @ vgs | 30 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1470 pF @ 50 V |
SIR606BDP-T1-RE3
[ALLOC] verified