Vishay SIR582DP-T1-RE3
MPNSIR582DP-T1-RE3
End of Life
N-CHANNEL 80 V (D-S) MOSFET POWE
$1.6Ref. price · indicative, final on quote
PackagingPowerPAK® SO-8
RoHSROHS3 Compliant
SeriesTrenchFET® Gen V
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | TrenchFET® Gen V |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 80 V |
| Drive voltage (Max rds on, min rds on) | 7.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 28.9A (Ta), 116A (Tc) |
| Power dissipation | 5.6W (Ta), 92.5W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | PowerPAK® SO-8 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 3.4mOhm @ 15A, 10V |
| Gate charge (Qg) (Max) @ vgs | 67 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 3360 pF @ 40 V |