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Vishay SIR500DP-T1-RE3

Vishay SIR500DP-T1-RE3

MPNSIR500DP-T1-RE3
End of Life

N-CHANNEL 30 V (D-S) 150C MOSFET

$1.58Ref. price · indicative, final on quote
PackagingPowerPAK® SO-8
RoHSROHS3 Compliant
SeriesTrenchFET® Gen V
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SIR500DP-T1-RE3 specifications
ParameterValue
SeriesTrenchFET® Gen V
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C85.9A (Ta), 350.8A (Tc)
Power dissipation6.25W (Ta), 104.1W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs+16V, -12V
TechnologyMOSFET (Metal Oxide)
CasePowerPAK® SO-8
Vgs(th) (Max) @ id2.2V @ 250µA
Rds on (Max) @ id, vgs0.47mOhm @ 20A, 10V
Gate charge (Qg) (Max) @ vgs180 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds8960 pF @ 15 V